AOD380A60 600v a mos5 tm n-channel power transistor general description product summary v ds @ t j,max 700v i dm 44a r ds(on),max < 0.38 q g,typ 20nc e oss @ 400v 2.6m j applications 100% uis tested 100% r g tested form tape&reel symbol v ds v gs v gs i dm i ar e ar e as t j , t stg t l symbol r q ja r q cs r q jc t c =25c power dissipation b derate above 25c p d w w/c 125 1.0 peak diode recovery dv/dt mj 210 avalanche current c repetitive avalanche energy c single pulsed avalanche energy g (t j =25c, v gs =10v, i l =2apk, l=105mh, r gs =25 w ) mj dv/dt 20 100 v/ns 3.1 mosfet dv/dt ruggedness v orderable part number ? proprietary a mos5 tm technology ? low r ds(on) ? optimized switching parameters for better emi performance ? enhanced body diode for robustness and fast reverse recovery ? smps with pfc, flyback and llc topologies ? silver atx ,adapter, tv, lighting, server power absolute maximum ratings t a =25c unless otherwise noted parameter package type units junction and storage temperature range -55 to 150 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds thermal characteristics parameter 300 c c AOD380A60 c/w c/w maximum junction-to-ambient a,d maximum junction-to-case maximum case-to-sink a c/w 55 0.5 1 minimum order quantity drain-source voltage v units 600 AOD380A60 to252 2500 AOD380A60 i d a 2.5 44 gate-source voltage pulsed drain current c 20 a t c =25c t c =100c continuous drain current 11 7.2 gate-source voltage (dynamic) ac( f>1hz) 3 0 v g d s g s d g s d top view to252 bottom view AOD380A60 s d d g s d rev.1.2: june 2018 www.aosmd.com page 1 of 6 downloaded from: http:///
AOD380A60 symbol min typ max units 600 - - - 700 - bv dss /?tj - 0.44 - v/ o c - - 1 - - 10 i gss - - 100 na v gs(th) gate threshold voltage 2.6 3.2 3.8 v r ds(on) - 0.33 0.38 g fs - 10 - s v sd - 0.85 1.2 v i s - - 11 a i sm - - 44 a c iss - 955 - pf c oss - 29 - pf c o(er) - 30 - pf c o(tr) - 122 - pf c rss - 2.4 - pf r g - 4.8 - q g - 20 - nc q gs - 4.6 - nc q gd - 6.6 - nc t d(on) - 20 - ns t r - 13 - ns t d(off) - 43 - ns t f - 16 - ns t rr - 251 - ns i rm - 19 - a q rr - 3.1 - m c applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design,functions and reliability without notice. m a v ds =480v, t j =125c maximum body-diode pulsed current c effective output capacitance, energy related h effective output capacitance, time related i v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 480v, f=1mhz v ds =0v, v gs =20v gate-body leakage current v gs =10v, v ds =480v, i d =5.5a total gate charge gate source charge gate drain charge switching parameters i d =250a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250a, v gs =0v i dss zero gate voltage drain current v ds =600v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz static drain-source on-resistance bv dss drain-source breakdown voltage i d =250a, v gs =0v, t j =25c v reverse transfer capacitance v ds =5v , i d =250 m a output capacitance forward transconductance i s =5.5a,v gs =0v v ds =10v, i d =5.5a v gs =10v, i d =5.5a v gs =0v, v ds =100v, f=1mhz maximum body-diode continuous current input capacitance diode forward voltage dynamic parameters v gs =10v, v ds =400v, i d =5.5a, r g =5 w turn-on rise time turn-on delaytime peak reverse recovery current i f =5.5a, di/dt=100a/ m s, v ds =400v body diode reverse recovery charge body diode reverse recovery time turn-off delaytime turn-off fall time a. the value of r q ja is measured with the device in a still air environment with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction- to -case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c, ratings are based on low frequency and duty cycles to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction- to -case thermal impedance which is measured with the device mounted to a large heat sink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. this is the absoluted maximum rating. parts are 100% teste d at t j =25 c, l=60mh, i as =1a, v dd =150v, r g =25 ? . h. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss. rev.1.2: june 2018 www.aosmd.com page 2 of 6 downloaded from: http:///
AOD380A60 typical electrical and thermal characteristics 0 0.2 0.4 0.6 0.8 1 0 3 6 9 12 15 r ds(on) ( w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 1e - 04 1e - 03 1e - 02 1e - 01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0 0.5 1 1.5 2 2.5 3 - 100 - 50 0 50 100 150 200 normalized on-resistance temperature ( c) figure 4: on-resistance vs. junction temperature v gs =10v i d =5.5a v gs =10v 0 5 10 15 20 25 0 3 6 9 12 15 i d (a) v ds (volts) figure 1: on-region characteristics v gs =5v 5.5v 6.5v 10v 8v 7v 6v 0.7 0.8 0.9 1 1.1 1.2 1.3 - 100 - 50 0 50 100 150 200 bv dss (normalized) t j ( c) figure 5: break down vs. junction temparature 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =10v 25 c 125 c rev.1.2: june 2018 www.aosmd.com page 3 of 6 downloaded from: http:///
AOD380A60 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1 10 100 1000 10000 0 100 200 300 400 500 600 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =480v i d =5.5a 0 2 4 6 8 10 12 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 10: current de-rating (note f) 0 2 4 6 8 10 0 100 200 300 400 500 600 eoss (uj) v ds (volts) figure 9: coss stored energy e oss 0.01 0.1 1 10 100 1000 1 10 100 1000 i d (amps) v ds (volts) figure 11: maximum forward biased safe operating area for AOD380A60 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s rev.1.2: june 2018 www.aosmd.com page 4 of 6 downloaded from: http:///
AOD380A60 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal impedance for AOD380A60 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm rev.1.2: june 2018 www.aosmd.com page 5 of 6 downloaded from: http:///
AOD380A60 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev.1.2: june 2018 www.aosmd.com page 6 of 6 downloaded from: http:///
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